Change search
Refine search result
1 - 3 of 3
CiteExportLink to result list
Permanent link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Rows per page
  • 5
  • 10
  • 20
  • 50
  • 100
  • 250
Sort
  • Standard (Relevance)
  • Author A-Ö
  • Author Ö-A
  • Title A-Ö
  • Title Ö-A
  • Publication type A-Ö
  • Publication type Ö-A
  • Issued (Oldest first)
  • Issued (Newest first)
  • Created (Oldest first)
  • Created (Newest first)
  • Last updated (Oldest first)
  • Last updated (Newest first)
  • Disputation date (earliest first)
  • Disputation date (latest first)
  • Standard (Relevance)
  • Author A-Ö
  • Author Ö-A
  • Title A-Ö
  • Title Ö-A
  • Publication type A-Ö
  • Publication type Ö-A
  • Issued (Oldest first)
  • Issued (Newest first)
  • Created (Oldest first)
  • Created (Newest first)
  • Last updated (Oldest first)
  • Last updated (Newest first)
  • Disputation date (earliest first)
  • Disputation date (latest first)
Select
The maximal number of hits you can export is 250. When you want to export more records please use the Create feeds function.
  • 1. Boström, Anders
    et al.
    Olsson, Peter
    Transmission and reflection of electromagnetic waves by an obstacle inside a waveguide1981In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 52, no 3, p. 1187-1196Article in journal (Refereed)
  • 2.
    Demidov, V.V.
    et al.
    Institute of Radio Engineering and Electronics, Russian Academy of Sciences.
    Ovsyannikov, G.A.
    Institute of Radio Engineering and Electronics, Russian Academy of Sciences.
    Petrzhik, A.M.
    Institute of Radio Engineering and Electronics, Russian Academy of Sciences.
    Borisenko, I.V.
    Institute of Radio Engineering and Electronics, Russian Academy of Sciences.
    Shadrin, A.V.
    Institute of Radio Engineering and Electronics, Russian Academy of Sciences.
    Gunnarsson, Robert
    Jönköping University, School of Education and Communication, HLK, School Based Research, Sustainable Development and Science education. Chalmers University of Technology.
    Magnetic anisotropy in strained manganite films and bicrystal junctions2013In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 113, no 16, p. 163909-163909-10Article in journal (Refereed)
    Abstract [en]

    Transport and magnetic properties of La0.67Sr0.33MnO3 (LSMO) manganite thin films and bicrystal junctions were investigated. Epitaxial manganite films were grown on SrTiO3, LaAlO3, NdGaO3 (NGO), and (LaAlO3)0.3 + (Sr2AlTaO6)0.7 substrates, and their magnetic anisotropy were determined by two independent techniques of magnetic resonance spectroscopy. It was demonstrated that by using these techniques, a small (0.3%) anisotropy of crystal structure at the (110) surface plane of the orthorhombic NGO substrate leads to uniaxial magnetic anisotropy of the films in the plane of the substrate at least at the room temperature. It was found that on vicinal NGO substrates, the value of magnetic anisotropy strength can be varied in the range 100–200 Oe at T = 295 K by changing the substrate vicinal angle from 0° to 25°. Measurement of the magnetic anisotropy of manganite bicrystal junction demonstrated the presence of two ferromagnetic spin subsystems for both types of bicrystal boundaries with tilting of basal plane of manganite tilted bicrystal (TB-junction) and with rotation of crystallographic axes (RB-junction) used for comparison. The magnetoresistance of TB-junctions increases with decreasing temperature and the misorientation angle. Variation of bicrystal misorientation angle does not lead to change of misorientation of easy magnetic axes in the film parts forming TB-junction. Analysis of the voltage dependencies of bicrystal junction conductivity show that the low value of the magnetoresistance for the LSMO bicrystal junctions can be caused by two scattering mechanisms. The first one is the spin-flip of spin-polarized carriers due to the strong electron-electron interactions in a disordered layer at the bicrystal boundary at low temperatures and the second one is spin-flip by antiferromagnetic magnons at high temperatures.

  • 3.
    Gunnarsson, Robert
    et al.
    Chalmers tekniska högskola, Institutionen för mikroteknologi och nanovetenskap.
    Hanson, Maj
    Chalmers tekniska högskola, Institutionen för tillämpad fysik.
    Dubourdieu, Catherine
    Laboratiore des Matériaux et du Génie Physique, CNRS, St. Martin d'Hères.
    Stoner-Wohlfarth model applied to bicrystal magnetoresistance hysteresis2004In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 96, no 1, p. 482-485Article in journal (Refereed)
    Abstract [en]

    We calculate numerically the magnetization direction as function of magnetic field in the Stoner–Wohlfarth theory and are able to reproduce the shape of the low-field magnetoresistance hysteresis observed in manganite grain boundary junctions. Moreover, we show that it is necessary to include biaxial magnetocrystalline anisotropy to fully describe the grain boundary magnetoresistance in La0.7Sr0.3MnO3/SrTiO3 bicrystal tunnel junctions.

1 - 3 of 3
CiteExportLink to result list
Permanent link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf