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Inhomogeneous Microstructure and Electrical Transport Properties at the LaAlO3/SrTiO3 Interface
MC2, Chalmers tekniska högskola.
MC2, Chalmers tekniska högskola.
MC2, Chalmers tekniska högskola.
Jönköping University, School of Education and Communication, HLK, School Based Research, Sustainable Development and Science education.
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2012 (English)In: Japanese Journal of Applied Physics, ISSN 0021-4922, E-ISSN 1347-4065, Vol. 51, no 11, 11PG10- p.Article in journal (Refereed) Published
Abstract [en]

Medium-energy ion spectroscopy (MEIS), scanning transmission electron microscopy (STEM) and X-ray photoemission spectroscopy (XPS) wereused to investigate the composition and microstructure of LaAlO3/SrTiO3 (LAO/STO) interfaces grown by pulsed laser deposition of LAO onTiO2-terminated STO substrates under different oxidizing conditions. MEIS and XPS indicated Sr/La and Al/Ti intermixing within several atomiclayers at all studied interfaces. XPS and STEM revealed that La diffuses deeper than Al. Analysis of the MEIS data suggests inhomogeneouslateral distribution of the diffused elements. This is further supported by the observation of a large positive magneto-resistance at low temperatures. We discuss the role of lateral inhomogeneities on the formation of the electron gas at the LAO/STO interface.

Place, publisher, year, edition, pages
2012. Vol. 51, no 11, 11PG10- p.
Keyword [en]
Oxide heterostructures, Room-temperature, Heterointerface, Growth
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:hj:diva-19869DOI: 10.1143/JJAP.51.11PG10Local ID: HLKövrigtISOAI: oai:DiVA.org:hj-19869DiVA: diva2:571527
Available from: 2012-11-23 Created: 2012-11-22 Last updated: 2017-02-22Bibliographically approved

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