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Thermo-mechanical reliability and performance degradation of a lead-free RF power amplifier with GaN-on-SiC HEMTs
SP Technical Research Institute of Sweden, Borås, Sweden.
Jönköping University, School of Engineering, JTH, Materials and Manufacturing. Jönköping University, School of Engineering, JTH. Research area Materials and manufacturing - Surface technology.
Saab AB, Gothenburg, Sweden.
Acreo Swedish ICT, Kista, Sweden.
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2017 (English)In: Materials Science Forum, Trans Tech Publications, 2017, Vol. 897, 715-718 p.Conference paper, (Refereed)
Abstract [en]

RF power amplifier demonstrators containing each one GaN-on-SiC, HEMT, CHZ015AQEG, from UMS in SMD quad-flat no-leads package (QFN) were subjected to thermal cycles (TC) and power cycles (PC) followed by electrical, thermal and structural evaluation. Two types of solders i.e. Sn63Pb36Ag2 and lead-free SnAgCu (SAC305) and two types of TIM materials (NanoTIM and TgonTM 805) for PCB attachment to liquid cold plate were tested for thermomechanical reliability. Changes in electrical performance of the devices namely reduction of the current saturation value, threshold voltage shift, increase of the leakage current and degradation of the HF performance were observed as a result of an accumulated current stress during PC. No significant changes in the investigated solder or TIM materials were observed.

Place, publisher, year, edition, pages
Trans Tech Publications, 2017. Vol. 897, 715-718 p.
Keyword [en]
GaN (gallium nitride), HEMT (high-electron-mobility transistor), PC (power cycle), Reliability, RF (radio frequency) power amplifier, SiC (silicon carbide), TC (thermal cycle), Gallium nitride, High electron mobility transistors, Lead, Lead-free solders, Polychlorinated biphenyls, Power amplifiers, Silicon, Silicon carbide, Soldering alloys, Thermal conductivity, Thermal cycling, Threshold voltage, Tin, Electrical performance, Performance degradation, Power cycle, Radio frequencies, Thermomechanical reliability, Threshold voltage shifts, Radio frequency amplifiers
National Category
Electrical Engineering, Electronic Engineering, Information Engineering Materials Engineering
Identifiers
URN: urn:nbn:se:hj:diva-36611DOI: 10.4028/www.scientific.net/MSF.897.715Scopus ID: 2-s2.0-85019987879ISBN: 9783035710434 (print)OAI: oai:DiVA.org:hj-36611DiVA: diva2:1120648
Conference
11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016; Halkidiki; Greece; 25 September 2016 through 29 September 2016
Available from: 2017-07-06 Created: 2017-07-06 Last updated: 2017-07-06Bibliographically approved

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CiteExportLink to record
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Citation style
  • apa
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