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Ni and Ti diffusion barrier layers between Ti-Si-C and Ti-Si-C-Ag nanocomposite coatings and Cu-based substrates
Högskolan i Jönköping, Tekniska Högskolan, JTH. Forskningsmiljö Material och tillverkning - Ytteknik.
Thin Film Physics Division, Department of Physics, IFM, Linköping University, Linköping, Sweden.
Department of Materials Chemistry, The Ångström Laboratory, Uppsala University, Uppsala, Sweden.
Thin Film Physics Division, Department of Physics, IFM, Linköping University, Linköping, Sweden.
Vise andre og tillknytning
2012 (engelsk)Inngår i: Surface & Coatings Technology, ISSN 0257-8972, E-ISSN 1879-3347, Vol. 206, nr 8-9, s. 2558-2565Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Sputtered Ni and Ti layers were investigated as a diffusion barrier to substitute electroplated Ni between Ti–Si–C and Ti–Si–C–Ag nanocomposite coatings and Cu or CuSn substrates. Samples were subjected to thermal annealing studies by exposure to 400 °C for 11 h. Dense diffusion barrier and coating hindered Cu from diffusing to the surface. This condition was achieved for electroplated Ni in combination with magnetron-sputtered Ti–Si–C and Ti–Si–C–Ag layers deposited at 230 °C and 300 °C, and sputtered Ti or Ni layers in combination with Ti–Si–C–Ag deposited at 300 °C.

sted, utgiver, år, opplag, sider
Elsevier, 2012. Vol. 206, nr 8-9, s. 2558-2565
Emneord [en]
Titanium carbide, Nanocomposite, Physical vapor deposition (PVD), Diffusion, Barrier, Annealing
HSV kategori
Identifikatorer
URN: urn:nbn:se:hj:diva-17248DOI: 10.1016/j.surfcoat.2011.11.014ISI: 000300458500069Scopus ID: 2-s2.0-84855277854OAI: oai:DiVA.org:hj-17248DiVA, id: diva2:480305
Tilgjengelig fra: 2012-01-19 Laget: 2012-01-19 Sist oppdatert: 2018-10-15bibliografisk kontrollert

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